InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes
Identifieur interne : 005226 ( Main/Repository ); précédent : 005225; suivant : 005227InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes
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Abstract
An efficient mechanical and electronic axial approximation of the strained 8 × 8 Hamiltonian is proposed for zinc-blende nanostructures with a cylindrical shape on (100) substrates. Vertically stacked InAs/InP columnar quantum dots (CQDs) for polarization insensitive semiconductor optical amplifier (SOA) in telecommunications applications are studied theoretically. Non-radiative Auger processes in InAs/InP quantum dots (QDs) are also investigated. It is shown that a multiband approach is necessary in both cases.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes</title><author><name sortKey="Even, J" uniqKey="Even J">J. Even</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON UMR6082, CNRS, INSA Rennes, Campus Beaulieu</s1><s2>35042 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Pedesseau, L" uniqKey="Pedesseau L">L. Pedesseau</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON UMR6082, CNRS, INSA Rennes, Campus Beaulieu</s1><s2>35042 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Dore, F" uniqKey="Dore F">F. Dore</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON UMR6082, CNRS, INSA Rennes, Campus Beaulieu</s1><s2>35042 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Boyer Richard, S" uniqKey="Boyer Richard S">S. Boyer-Richard</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON UMR6082, CNRS, INSA Rennes, Campus Beaulieu</s1><s2>35042 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0468543</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0468543 INIST</idno><idno type="RBID">Pascal:09-0468543</idno><idno type="wicri:Area/Main/Corpus">004E04</idno><idno type="wicri:Area/Main/Repository">005226</idno></publicationStmt><seriesStmt><idno type="ISSN">0306-8919</idno><title level="j" type="abbreviated">Opt. quantum electron.</title><title level="j" type="main">Optical and quantum electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Hamiltonians</term><term>III-V semiconductors</term><term>Indium Arsenides</term><term>Indium Phosphides</term><term>Nanostructures</term><term>Optical amplifier</term><term>Optical polarization</term><term>Optoelectronic devices</term><term>Quantum dots</term><term>Semiconductor optical amplifiers</term><term>Strains</term><term>Zinc</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Déformation mécanique</term><term>Amplificateur optique semiconducteur</term><term>Amplificateur optique</term><term>Hamiltonien</term><term>Polarisation optique</term><term>Nanostructure</term><term>Point quantique</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Semiconducteur III-V</term><term>Indium Phosphure</term><term>Zinc</term><term>Dispositif optoélectronique</term><term>InAs</term><term>As In</term><term>In P</term><term>InP</term><term>0130C</term><term>4260D</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An efficient mechanical and electronic axial approximation of the strained 8 × 8 Hamiltonian is proposed for zinc-blende nanostructures with a cylindrical shape on (100) substrates. Vertically stacked InAs/InP columnar quantum dots (CQDs) for polarization insensitive semiconductor optical amplifier (SOA) in telecommunications applications are studied theoretically. Non-radiative Auger processes in InAs/InP quantum dots (QDs) are also investigated. It is shown that a multiband approach is necessary in both cases.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0306-8919</s0></fA01><fA02 i1="01"><s0>OQELDI</s0></fA02><fA03 i2="1"><s0>Opt. quantum electron.</s0></fA03><fA05><s2>40</s2></fA05><fA06><s2>14-15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Special Issue on Numerical Simulation of Optoelectronic Devices (2008)</s1></fA09><fA11 i1="01" i2="1"><s1>EVEN (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>PEDESSEAU (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>DORE (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>BOYER-RICHARD (S.)</s1></fA11><fA12 i1="01" i2="1"><s1>AVRUTIN (Eugene)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>TOMIC (Stanko)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>WITZIGMANN (Bernd)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>YODER (Douglas)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>FOTON UMR6082, CNRS, INSA Rennes, Campus Beaulieu</s1><s2>35042 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Department of Electronics, University of York</s1><s2>Heslington, York YO10 5DD</s2><s3>GBR</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Computational Science and Engineering Department, STFC Daresbury Laboratory</s1><s2>Daresbury, Warrington, Cheshire WA4 4AD</s2><s3>GBR</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Electrical Engineering and Computer Science Department, University of Kassel</s1><s2>34121 Kassel</s2><s3>DEU</s3><sZ>3 aut.</sZ></fA15><fA15 i1="04"><s1>Electrical and Computer Engineering, Georgia Institute of Technology</s1><s2>Savannah, GA</s2><s3>USA</s3><sZ>4 aut.</sZ></fA15><fA20><s1>1233-1238</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14220</s2><s5>354000171178550250</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>3/4 p.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0468543</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Optical and quantum electronics</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>An efficient mechanical and electronic axial approximation of the strained 8 × 8 Hamiltonian is proposed for zinc-blende nanostructures with a cylindrical shape on (100) substrates. Vertically stacked InAs/InP columnar quantum dots (CQDs) for polarization insensitive semiconductor optical amplifier (SOA) in telecommunications applications are studied theoretically. Non-radiative Auger processes in InAs/InP quantum dots (QDs) are also investigated. 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